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Part Number Overview
Manufacturer Part Number
FQPF12P10
Description
MOSFET P-CH 100V 8.2A TO220F
Detailed Description
P-Channel 100 V 8.2A (Tc) 38W (Tc) Through Hole TO-220F-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQPF12P10 Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
8.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
290mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
38W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Base Product Number
FQPF1
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQPF12P10
Documents & Media
Datasheets
1(FQPF12P10)
Environmental Information
1(onsemi RoHS)
HTML Datasheet
1(FQPF12P10)
EDA Models
1(FQPF12P10 Models)
Quantity Price
-
Substitutes
-