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Part Number Overview
Manufacturer Part Number
FQPF8N80C
Description
MOSFET N-CH 800V 8A TO220F
Detailed Description
N-Channel 800 V 8A (Tc) 59W (Tc) Through Hole TO-220F-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.55Ohm @ 4A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
2050 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
59W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Base Product Number
FQPF8
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-FQPF8N80C-OS
ONSONSFQPF8N80C
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQPF8N80C
Documents & Media
Datasheets
1(FQPF8N80C Datasheet)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 21/Dec/2021)
PCN Design/Specification
()
PCN Assembly/Origin
1(Mult Dev 03/Nov/2023)
PCN Packaging
()
Quantity Price
-
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