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Part Number Overview
Manufacturer Part Number
IPU50R950CEBTMA1
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 500 V 4.3A (Tc) 34W (Tc) Through Hole PG-TO251-3-345
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,731
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS CE™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
4.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
13V
Rds On (Max) @ Id, Vgs
950mOhm @ 1.2A, 13V
Vgs(th) (Max) @ Id
3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
10.5 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
231 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
34W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-345
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IFEINFIPU50R950CEBTMA1
2156-IPU50R950CEBTMA1
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPU50R950CEBTMA1
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
-
Substitutes
-