China
Spain
Rusia
Italy
GermanyAPT45GP120B2DQ2G
Part Number Overview
Manufacturer Part Number
APT45GP120B2DQ2G
Description
IGBT 1200V 113A 625W TMAX
Detailed Description
IGBT PT 1200 V 113 A 625 W Through Hole
Manufacturer
Microchip Technology
Standard LeadTime
43 Weeks
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
Microchip Technology
Series
POWER MOS 7®
Package
Tube
Product Status
Active
IGBT Type
PT
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
113 A
Current - Collector Pulsed (Icm)
170 A
Vce(on) (Max) @ Vge, Ic
3.9V @ 15V, 45A
Power - Max
625 W
Switching Energy
900µJ (on), 905µJ (off)
Input Type
Standard
Gate Charge
185 nC
Td (on/off) @ 25°C
18ns/100ns
Test Condition
600V, 45A, 5Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-247-3 Variant
Base Product Number
APT45GP120
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
APT45GP120B2DQ2GMI-ND
APT45GP120B2DQ2GMI
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Microchip Technology APT45GP120B2DQ2G
Documents & Media
Datasheets
1(APT45GP120B2DQ2(G))
Environmental Information
()
PCN Assembly/Origin
1(APT1/2/3/4/5/6/8xx 22/Dec/2022)
HTML Datasheet
1(APT45GP120B2DQ2(G))
Product Drawings
1(T-MAX Front)
Quantity Price
Quantity: 100
Unit Price: $16.6875
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $20.57
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Substitutes
-