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Part Number Overview
Manufacturer Part Number
SI7302DN-T1-GE3
Description
MOSFET N-CH 220V 8.4A PPAK1212-8
Detailed Description
N-Channel 220 V 8.4A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
220 V
Current - Continuous Drain (Id) @ 25°C
8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
320mOhm @ 2.3A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
21 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
645 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
3.8W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SI7302
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI7302DN-T1-GE3
Documents & Media
HTML Datasheet
1(SI7302DN)
Quantity Price
-
Substitutes
Part No. : SI7302DN-T1-E3
Manufacturer. : Vishay Siliconix
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Parametric Equivalent
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Parametric Equivalent