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Part Number Overview
Manufacturer Part Number
IRFB4212PBF
Description
MOSFET N-CH 100V 18A TO220AB
Detailed Description
N-Channel 100 V 18A (Tc) 60W (Tc) Through Hole TO-220AB
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
IRFB4212PBF Models
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
18A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
72.5mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
550 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
60W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFB4212PBF
Documents & Media
Datasheets
1(IRFB4212PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(High Voltage Integrated Circuits (HVIC Gate Drivers))
Featured Product
1(Data Processing Systems)
EDA Models
1(IRFB4212PBF Models)
Quantity Price
-
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