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Part Number Overview
Manufacturer Part Number
PSMN1R9-40PL,127
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description
N-Channel 40 V 150A (Ta) 349W (Ta) Through Hole TO-220AB
Manufacturer
Nexperia USA Inc.
Standard LeadTime
Edacad Model
Standard Package
173
Supplier Stocks
Technical specifications
Mfr
Nexperia USA Inc.
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
150A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
13200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
349W (Ta)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
PSMN1R9
Environmental & Export Classifications
HTSUS
0000.00.0000
Other Names
NEXNEXPSMN1R9-40PL,127
2156-PSMN1R9-40PL,127-NEX
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Nexperia USA Inc. PSMN1R9-40PL,127
Documents & Media
Datasheets
1(PSMN1R9-40PL)
HTML Datasheet
1(PSMN1R9-40PL)
Quantity Price
-
Substitutes
-