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Part Number Overview
Manufacturer Part Number
PDTC115EMB,315
Description
TRANS PREBIAS NPN 50V 0.02A 3DFN
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 20 mA 230 MHz 250 mW Surface Mount DFN1006B-3
Manufacturer
NXP Semiconductors
Standard LeadTime
Edacad Model
Standard Package
11,181
Supplier Stocks
Technical specifications
Mfr
NXP Semiconductors
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
20 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
100 kOhms
Resistor - Emitter Base (R2)
100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
1µA
Frequency - Transition
230 MHz
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Supplier Device Package
DFN1006B-3
Base Product Number
PDTC115
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
NEXNEXPDTC115EMB,315
2156-PDTC115EMB,315-NEX
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NXP Semiconductors PDTC115EMB,315
Documents & Media
Datasheets
1(PDTC115EMB)
Quantity Price
Quantity: 11181
Unit Price: $0.03
Packaging: Bulk
MinMultiplier: 11181
Packaging: Bulk
MinMultiplier: 11181
Substitutes
-