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Part Number Overview
Manufacturer Part Number
HAT2165HWS-E
Description
MOSFET N-CH 30V 55A 5LFPAK
Detailed Description
N-Channel 30 V 55A (Ta) 30W (Tc) Surface Mount LFPAK
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
55A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5180 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
150°C
Mounting Type
Surface Mount
Supplier Device Package
LFPAK
Package / Case
SC-100, SOT-669
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation HAT2165HWS-E
Documents & Media
PCN Obsolescence/ EOL
1(Mult Dev EOL 15/Dec/2018)
PCN Packaging
1(Label Change-All Devices 01/Dec/2022)
Quantity Price
-
Substitutes
-