China
Spain
Rusia
Italy
Germany2N5551,412
Part Number Overview
Manufacturer Part Number
2N5551,412
Description
TRANS NPN 160V 0.3A TO92-3
Detailed Description
Bipolar (BJT) Transistor NPN 160 V 300 mA 300MHz 630 mW Through Hole TO-92-3
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Tube
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
300 mA
Voltage - Collector Emitter Breakdown (Max)
160 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
630 mW
Frequency - Transition
300MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Base Product Number
2N55
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
933215530412
2N5551P-ND
2N5551P
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. 2N5551,412
Documents & Media
Datasheets
1(2N5550,51)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(2N5550,51)
Quantity Price
-
Substitutes
Part No. : 2N5551BU
Manufacturer. : onsemi
Quantity Available. : 405,000
Unit Price. : $0.36000
Substitute Type. : Similar
Quantity Available. : 405,000
Unit Price. : $0.36000
Substitute Type. : Similar
Part No. : 2N5551YBU
Manufacturer. : onsemi
Quantity Available. : 0
Unit Price. : $0.36000
Substitute Type. : Similar
Quantity Available. : 0
Unit Price. : $0.36000
Substitute Type. : Similar