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SI2335DS-T1-E3
Part Number Overview
Manufacturer Part Number
SI2335DS-T1-E3
Description
MOSFET P-CH 12V 3.2A SOT23-3
Detailed Description
P-Channel 12 V 3.2A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
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Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
51mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id
450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
1225 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
750mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
SI2335
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
SI2335DST1E3
SI2335DS-T1-E3DKR
SI2335DS-T1-E3CT
SI2335DS-T1-E3-ND
SI2335DS-T1-E3TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI2335DS-T1-E3
Documents & Media
Datasheets
1(Si2335DS)
Environmental Information
()
PCN Obsolescence/ EOL
1(PCN- SIL-0582013 05/Dec/2013)
HTML Datasheet
1(Si2335DS)
Quantity Price
-
Substitutes
Part No. : SI2333DDS-T1-GE3
Manufacturer. : Vishay Siliconix
Quantity Available. : 0
Unit Price. : $61.00000
Substitute Type. : Similar
Part No. : IRLML6401TRPBF
Manufacturer. : Infineon Technologies
Quantity Available. : 49,706
Unit Price. : $67.00000
Substitute Type. : Similar
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