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Part Number Overview
Manufacturer Part Number
SPP04N60C2
Description
N-CHANNEL POWER MOSFET
Detailed Description
N-Channel 600 V 4.5A (Tc) 50W (Tc) Through Hole PG-TO220-3-1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
799
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id
5.5V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
22.9 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
580 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-1
Package / Case
TO-220-3
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
INFINFSPP04N60C2
2156-SPP04N60C2
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPP04N60C2
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 799
Unit Price: $0.38
Packaging: Bulk
MinMultiplier: 799
Packaging: Bulk
MinMultiplier: 799
Substitutes
-