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Part Number Overview
Manufacturer Part Number
FDP8880
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Detailed Description
N-Channel 30 V 11A (Ta), 54A (Tc) 55W (Tc) Through Hole TO-220-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
573
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta), 54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
11.6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1240 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
55W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
FAIFSCFDP8880
2156-FDP8880
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDP8880
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 573
Unit Price: $0.52
Packaging: Bulk
MinMultiplier: 573
Packaging: Bulk
MinMultiplier: 573
Substitutes
-