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Part Number Overview
Manufacturer Part Number
IXTT3N200P3HV
Description
MOSFET N-CH 2000V 3A TO268
Detailed Description
N-Channel 2000 V 3A (Tc) 520W (Tc) Surface Mount TO-268HV (IXTT)
Manufacturer
IXYS
Standard LeadTime
43 Weeks
Edacad Model
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
Polar P3™
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
2000 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1860 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
520W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-268HV (IXTT)
Package / Case
TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Base Product Number
IXTT3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTT3N200P3HV
Documents & Media
Datasheets
1(IXT(H,T)3N200P3HV)
Environmental Information
1(Ixys IC REACH)
PCN Design/Specification
1(Mult Dev MSL3 Pkg Chg 9/Jun/2020)
PCN Packaging
1(Multiple Devices MSL 09/Jun/2020)
HTML Datasheet
1(IXT(H,T)3N200P3HV)
Quantity Price
Quantity: 100
Unit Price: $38.9483
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 10
Unit Price: $44.373
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Quantity: 1
Unit Price: $49.8
Packaging: Tube
MinMultiplier: 1
Packaging: Tube
MinMultiplier: 1
Substitutes
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