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Part Number Overview
Manufacturer Part Number
BSP31,115
Description
NOW NEXPERIA BSP31 - POWER BIPOL
Detailed Description
Bipolar (BJT) Transistor PNP 60 V 1 A 100MHz 1.3 W Surface Mount SOT-223
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
1,989
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 100mA, 5V
Power - Max
1.3 W
Frequency - Transition
100MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
SOT-223
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2156-BSP31,115
NEXNXPBSP31,115
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. BSP31,115
Documents & Media
Datasheets
1(BSP31,115 Datasheet)
Quantity Price
Quantity: 1989
Unit Price: $0.15
Packaging: Bulk
MinMultiplier: 1989
Packaging: Bulk
MinMultiplier: 1989
Substitutes
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