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Part Number Overview
Manufacturer Part Number
APTM10DHM09T3G
Description
MOSFET 2N-CH 100V 139A SP3
Detailed Description
Mosfet Array 100V 139A 390W Chassis Mount SP3
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
POWER MOS V®
Package
Bulk
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Asymmetrical
FET Feature
-
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
139A
Rds On (Max) @ Id, Vgs
10mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id
4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
9875pF @ 25V
Power - Max
390W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP3
Supplier Device Package
SP3
Base Product Number
APTM10
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
APTM10DHM09T3G-ND
150-APTM10DHM09T3G
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microsemi Corporation APTM10DHM09T3G
Documents & Media
Environmental Information
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Quantity Price
-
Substitutes
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