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2SB1215S-E
Part Number Overview
Manufacturer Part Number
2SB1215S-E
Description
TRANS PNP 100V 3A TP
Detailed Description
Bipolar (BJT) Transistor PNP 100 V 3 A 130MHz 1 W Through Hole TP
Manufacturer
onsemi
Standard LeadTime
Edacad Model
2SB1215S-E Models
Standard Package
500
Supplier Stocks
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Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 500mA, 5V
Power - Max
1 W
Frequency - Transition
130MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
TP
Base Product Number
2SB1215
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2156-2SB1215S-E
ONSONS2SB1215S-E
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SB1215S-E
Documents & Media
Datasheets
1(2SB1215/2SD1815)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Sep/2022)
EDA Models
1(2SB1215S-E Models)
Quantity Price
-
Substitutes
-
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