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Part Number Overview
Manufacturer Part Number
JAN2N6251T1
Description
TRANS NPN 350V 10A TO254AA
Detailed Description
Bipolar (BJT) Transistor NPN 350 V 10 A 6 W Through Hole TO-254AA
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
350 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 1.67A, 10A
Current - Collector Cutoff (Max)
1mA
DC Current Gain (hFE) (Min) @ Ic, Vce
6 @ 10A, 3V
Power - Max
6 W
Frequency - Transition
-
Operating Temperature
-65°C ~ 200°C (TJ)
Grade
Military
Qualification
MIL-PRF-19500/510
Mounting Type
Through Hole
Package / Case
TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package
TO-254AA
Base Product Number
2N6251
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
1086-16190-ND
150-JAN2N6251T1
1086-16190
1086-16190-MIL
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Microsemi Corporation JAN2N6251T1
Documents & Media
Datasheets
1(2N6249,50,51(T1))
Environmental Information
()
HTML Datasheet
1(2N6249,50,51(T1))
Quantity Price
-
Substitutes
-