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2SC3324GRTE85LF
Part Number Overview
Manufacturer Part Number
2SC3324GRTE85LF
Description
TRANS NPN 120V 0.1A TO236
Detailed Description
Bipolar (BJT) Transistor NPN 120 V 100 mA 100MHz 150 mW Surface Mount TO-236
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
2SC3324GRTE85LF Models
Standard Package
3,000
Supplier Stocks
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Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
120 V
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2mA, 6V
Power - Max
150 mW
Frequency - Transition
100MHz
Operating Temperature
125°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
TO-236
Base Product Number
2SC3324
Environmental & Export Classifications
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2SC3324-GR(TE85L,F
2SC3324GRTE85LFDKR
2SC3324GRTE85LFCT
2SC3324GRTE85LFTR
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SC3324GRTE85LF
Documents & Media
Datasheets
1(2SC3324)
PCN Obsolescence/ EOL
1(Mult Dev EOL Rev Apr/2021)
EDA Models
1(2SC3324GRTE85LF Models)
Quantity Price
-
Substitutes
Part No. : 2SC2713-GR,LF
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 13,935
Unit Price. : $0.29000
Substitute Type. : Parametric Equivalent
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