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Part Number Overview
Manufacturer Part Number
2SB1481(TOJS,Q,M)
Description
TRANS PNP 100V 4A TO220NIS
Detailed Description
Bipolar (BJT) Transistor PNP 100 V 4 A 2 W Through Hole TO-220NIS
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
4 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 6mA, 3A
Current - Collector Cutoff (Max)
2µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
2000 @ 3A, 2V
Power - Max
2 W
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Supplier Device Package
TO-220NIS
Base Product Number
2SB1481
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2SB1481(TOJSQM)
2SB1481TOJSQM
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Toshiba Semiconductor and Storage 2SB1481(TOJS,Q,M)
Documents & Media
Datasheets
1(2SB1481)
HTML Datasheet
1(2SB1481)
Quantity Price
-
Substitutes
Part No. : 2SB1258
Manufacturer. : Toshiba Semiconductor and Storage
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Similar
Quantity Available. : 0
Unit Price. : $0.00000
Substitute Type. : Similar