IPD65R420CFDBTMA1

Part Number Overview

Manufacturer Part Number

IPD65R420CFDBTMA1

Description

MOSFET N-CH 650V 8.7A TO252-3

Detailed Description

N-Channel 650 V 8.7A (Tc) 83.3W (Tc) Surface Mount PG-TO252-3

Manufacturer

Infineon Technologies

Standard LeadTime

Edacad Model

Standard Package

2,500

Supplier Stocks

>>>Click to Check<<<

Technical specifications

Mfr

Infineon Technologies

Series

CoolMOS™

Package

Tape & Reel (TR)

Product Status

Obsolete

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

420mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id

4.5V @ 340µA

Gate Charge (Qg) (Max) @ Vgs

32 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

870 pF @ 100 V

FET Feature

-

Power Dissipation (Max)

83.3W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

PG-TO252-3

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Base Product Number

IPD65R

Environmental & Export Classifications

RoHS Status

ROHS3 Compliant

Moisture Sensitivity Level (MSL)

1 (Unlimited)

REACH Status

REACH Unaffected

ECCN

EAR99

HTSUS

8541.29.0095

Other Names

IPD65R420CFDBTMA1TR

SP000891704

IPD65R420CFD

IPD65R420CFDDKR

2156-IPD65R420CFDBTMA1

IPD65R420CFDBTMA1DKR

IPD65R420CFDDKR-ND

IPD65R420CFDCT-ND

IPD65R420CFDTR-ND

IPD65R420CFDBTMA1CT

INFINFIPD65R420CFDBTMA1

IPD65R420CFDCT

IPD65R420CFD-ND

Documents & Media

Datasheets

1(IPx65R420CFD)

Quantity Price

-

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IPD65R420CFDBTMA1

Part Number Overview

Technical specifications

Environmental & Export Classifications

Other Names

Category

Documents & Media

Quantity Price

Substitutes

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