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Part Number Overview
Manufacturer Part Number
SIE868DF-T1-GE3
Description
MOSFET N-CH 40V 60A 10POLARPAK
Detailed Description
N-Channel 40 V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
145 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6100 pF @ 20 V
FET Feature
-
Power Dissipation (Max)
5.2W (Ta), 125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
10-PolarPAK® (L)
Package / Case
10-PolarPAK® (L)
Base Product Number
SIE868
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SIE868DFT1GE3
SIE868DF-T1-GE3CT
SIE868DF-T1-GE3DKR
SIE868DF-T1-GE3TR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIE868DF-T1-GE3
Documents & Media
Datasheets
1(SIE868DF)
PCN Obsolescence/ EOL
1(Mult Mosfet EOL 30/Aug/2018)
HTML Datasheet
1(SIE868DF)
Quantity Price
-
Substitutes
-