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Part Number Overview
Manufacturer Part Number
FQP2N60C
Description
MOSFET N-CH 600V 2A TO220-3
Detailed Description
N-Channel 600 V 2A (Tc) 54W (Tc) Through Hole TO-220-3
Manufacturer
onsemi
Standard LeadTime
Edacad Model
FQP2N60C Models
Standard Package
1,000
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.7Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
235 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
54W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Base Product Number
FQP2
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
FAIFSCFQP2N60C
FQP2N60C-ND
2156-FQP2N60C-OS
FQP2N60CFS
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQP2N60C
Documents & Media
Datasheets
1(FQP2N60C Datasheet)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 23/Dec/2021)
PCN Design/Specification
()
PCN Assembly/Origin
1(Mult Dev Asembly Chg 7/May/2020)
PCN Packaging
1(Mult Devices 24/Oct/2017)
HTML Datasheet
1(TO220B03 Pkg Drawing)
EDA Models
1(FQP2N60C Models)
Product Drawings
1(TO220B03 Pkg Drawing)
Quantity Price
-
Substitutes
Part No. : IRFBC20PBF
Manufacturer. : Vishay Siliconix
Quantity Available. : 7,688
Unit Price. : $1.35000
Substitute Type. : Similar
Quantity Available. : 7,688
Unit Price. : $1.35000
Substitute Type. : Similar