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Part Number Overview
Manufacturer Part Number
SI7615BDN-T1-GE3
Description
MOSFET P-CH 20V 29A/104A PPAK
Detailed Description
P-Channel 20 V 29A (Ta), 104A (Tc) 5.2W (Ta), 66W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
-
Package
Digi-Reel®
Product Status
Discontinued at allaboutcomponents.com
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
29A (Ta), 104A (Tc)
Rds On (Max) @ Id, Vgs
3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
155 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
4890 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
5.2W (Ta), 66W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® 1212-8
Package / Case
PowerPAK® 1212-8
Base Product Number
SI7615
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
742-SI7615BDN-T1-GE3TR
742-SI7615BDN-T1-GE3CT
742-SI7615BDN-T1-GE3DKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI7615BDN-T1-GE3
Documents & Media
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Quantity Price
-
Substitutes
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