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Part Number Overview
Manufacturer Part Number
RN1421TE85LF
Description
TRANS PREBIAS NPN 50V 0.8A SMINI
Detailed Description
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 800 mA 300 MHz 200 mW Surface Mount S-Mini
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
40 Weeks
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
800 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 100mA, 1V
Vce Saturation (Max) @ Ib, Ic
250mV @ 2mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
300 MHz
Power - Max
200 mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Supplier Device Package
S-Mini
Base Product Number
RN1421
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
264-RN1421TE85LFTR
264-RN1421TE85LFCT
RN1421(TE85L,F)
264-RN1421TE85LFDKR
RN1421TE85LF-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN1421TE85LF
Documents & Media
Datasheets
1(RN142x)
Quantity Price
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Unit Price: $0.07221
Packaging: Tape & Reel (TR)
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