China
Spain
Rusia
Italy
GermanyR6030ENZC8
Part Number Overview
Manufacturer Part Number
R6030ENZC8
Description
MOSFET N-CH 600V 30A TO3PF
Detailed Description
N-Channel 600 V 30A (Tc) 120W (Tc) Through Hole TO-3PF
Manufacturer
Rohm Semiconductor
Standard LeadTime
Edacad Model
R6030ENZC8 Models
Standard Package
Supplier Stocks
Technical specifications
Mfr
Rohm Semiconductor
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
130mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
85 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2100 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
120W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3PF
Package / Case
TO-3P-3 Full Pack
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Rohm Semiconductor R6030ENZC8
Documents & Media
Other Related Documents
()
Environmental Information
()
PCN Obsolescence/ EOL
()
EDA Models
1(R6030ENZC8 Models)
Simulation Models
1(R6030ENZ Spice Model)
Quantity Price
-
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