China
Spain
Rusia
Italy
GermanyPDTB143EQA147
Part Number Overview
Manufacturer Part Number
PDTB143EQA147
Description
TRANS PREBIAS PNP 50V 0.5A 3DFN
Detailed Description
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 150 MHz 325 mW Surface Mount DFN1010D-3
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
8,219
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
PDTB143
Package
Bulk
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
4.7 kOhms
Resistor - Emitter Base (R2)
4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic
100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
150 MHz
Power - Max
325 mW
Mounting Type
Surface Mount
Package / Case
3-XDFN Exposed Pad
Supplier Device Package
DFN1010D-3
Base Product Number
PDTB143
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
NEXNXPPDTB143EQA147
2156-PDTB143EQA147
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/NXP USA Inc. PDTB143EQA147
Documents & Media
Datasheets
1(PDTB114EQA147 Datasheet)
HTML Datasheet
1(PDTB114EQA147 Datasheet)
Quantity Price
-
Substitutes
-