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IRF6706S2TR1PBF
Part Number Overview
Manufacturer Part Number
IRF6706S2TR1PBF
Description
MOSFET N-CH 25V 17A DIRECTFET
Detailed Description
N-Channel 25 V 17A (Ta), 63A (Tc) 1.8W (Ta), 26W (Tc) Surface Mount DirectFET™ Isometric S1
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
1,000
Supplier Stocks
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Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
17A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 17A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1810 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta), 26W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DirectFET™ Isometric S1
Package / Case
DirectFET™ Isometric S1
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRF6706S2TR1PBFCT
IRF6706S2TR1PBFTR
SP001528294
IRF6706S2TR1PBFDKR
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6706S2TR1PBF
Documents & Media
Datasheets
1(IRF6706S2TR(1)PbF)
Other Related Documents
1(IR Part Numbering System)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
Product Drawings
1(IR Hexfet Circuit)
Quantity Price
Quantity: 500
Unit Price: $0.78658
Packaging: Cut Tape (CT)
MinMultiplier: 1
Quantity: 100
Unit Price: $0.8066
Packaging: Cut Tape (CT)
MinMultiplier: 1
Quantity: 10
Unit Price: $0.953
Packaging: Cut Tape (CT)
MinMultiplier: 1
Quantity: 1
Unit Price: $1.11
Packaging: Cut Tape (CT)
MinMultiplier: 1
Substitutes
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