China
Spain
Rusia
Italy
GermanyRF1S70N03
Part Number Overview
Manufacturer Part Number
RF1S70N03
Description
MOSFET N-CH 30V 70A TO262AA
Detailed Description
N-Channel 30 V 70A (Tc) 150W (Tc) Through Hole TO-262AA
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
188
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
70A (Tc)
Rds On (Max) @ Id, Vgs
10mOhm @ 70A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
260 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262AA
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
0000.00.0000
Other Names
2156-RF1S70N03
HARHARRF1S70N03
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RF1S70N03
Documents & Media
Datasheets
1(RF1S70N03)
Quantity Price
Quantity: 188
Unit Price: $1.6
Packaging: Bulk
MinMultiplier: 188
Packaging: Bulk
MinMultiplier: 188
Substitutes
-