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Part Number Overview
Manufacturer Part Number
IXTU2N80P
Description
MOSFET N-CH 800V 2A TO251
Detailed Description
N-Channel 800 V 2A (Tc) 70W (Tc) Through Hole TO-251AA
Manufacturer
IXYS
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
PolarHV™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
6Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
5.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
10.6 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
440 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
70W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251AA
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
IXTU2
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTU2N80P
Documents & Media
Datasheets
1(IXT(A,P,U,Y)2N80P)
PCN Obsolescence/ EOL
1(Mult DEV EOL/OBS 08/Nov/2023)
HTML Datasheet
1(IXT(A,P,U,Y)2N80P)
Quantity Price
-
Substitutes
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Substitute Type. : Similar