China
Spain
Rusia
Italy
GermanyBS108,126
Part Number Overview
Manufacturer Part Number
BS108,126
Description
MOSFET N-CH 200V 300MA TO92-3
Detailed Description
N-Channel 200 V 300mA (Ta) 1W (Ta) Through Hole TO-92-3
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
2,000
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
-
Package
Tape & Box (TB)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.8V
Rds On (Max) @ Id, Vgs
5Ohm @ 100mA, 2.8V
Vgs(th) (Max) @ Id
1.8V @ 1mA
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
120 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Base Product Number
BS10
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
BS108 AMO-ND
934003840126
BS108 AMO
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BS108,126
Documents & Media
Datasheets
1(BS108)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(BS108)
Quantity Price
-
Substitutes
-