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WNSC2D08650TJ
Part Number Overview
Manufacturer Part Number
WNSC2D08650TJ
Description
DIODE SIL CARBIDE 650V 8A 5DFN
Detailed Description
Diode 650 V 8A Surface Mount 5-DFN (8x8)
Manufacturer
WeEn Semiconductors
Standard LeadTime
8 Weeks
Edacad Model
Standard Package
3,000
Supplier Stocks
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Technical specifications
Mfr
WeEn Semiconductors
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Technology
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)
650 V
Current - Average Rectified (Io)
8A
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 8 A
Speed
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)
0 ns
Current - Reverse Leakage @ Vr
40 µA @ 650 V
Capacitance @ Vr, F
260pF @ 1V, 1MHz
Mounting Type
Surface Mount
Package / Case
4-VSFN Exposed Pad
Supplier Device Package
5-DFN (8x8)
Operating Temperature - Junction
175°C
Base Product Number
WNSC2
Environmental & Export Classifications
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.10.0080
Other Names
934072780118
1740-WNSC2D08650TJDKR
1740-WNSC2D08650TJTR
1740-WNSC2D08650TJCT
Category
/Product Index/Discrete Semiconductor Products/Diodes/Rectifiers/Single Diodes/WeEn Semiconductors WNSC2D08650TJ
Documents & Media
Datasheets
1(WNSC2D08650T)
Quantity Price
Quantity: 9000
Unit Price: $1.025
Packaging: Tape & Reel (TR)
MinMultiplier: 3000
Quantity: 6000
Unit Price: $1.0601
Packaging: Tape & Reel (TR)
MinMultiplier: 3000
Quantity: 3000
Unit Price: $1.10151
Packaging: Tape & Reel (TR)
MinMultiplier: 3000
Substitutes
-
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