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Part Number Overview
Manufacturer Part Number
30C02SP-AC
Description
NPN SILICON TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor NPN 30 V 700 mA 540MHz 400 mW Through Hole 3-SPA
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
5,323
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
700 mA
Voltage - Collector Emitter Breakdown (Max)
30 V
Vce Saturation (Max) @ Ib, Ic
190mV @ 10mA, 200mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 50mA, 2V
Power - Max
400 mW
Frequency - Transition
540MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
3-SSIP
Supplier Device Package
3-SPA
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Other Names
2156-30C02SP-AC
ONSONS30C02SP-AC
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 30C02SP-AC
Documents & Media
Datasheets
1(30C02MH)
Quantity Price
Quantity: 5323
Unit Price: $0.06
Packaging: Bulk
MinMultiplier: 5323
Packaging: Bulk
MinMultiplier: 5323
Substitutes
-