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Part Number Overview
Manufacturer Part Number
HUF75309D3S
Description
MOSFET N-CH 55V 19A DPAK
Detailed Description
N-Channel 55 V 19A (Tc) 55W (Tc) Surface Mount TO-252 (DPAK)
Manufacturer
Harris Corporation
Standard LeadTime
Edacad Model
Standard Package
1,025
Supplier Stocks
Technical specifications
Mfr
Harris Corporation
Series
UltraFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
70mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
350 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
55W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-HUF75309D3S-HC
HARHARHUF75309D3S
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation HUF75309D3S
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 1025
Unit Price: $0.29
Packaging: Tube
MinMultiplier: 1025
Packaging: Tube
MinMultiplier: 1025
Substitutes
-