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Part Number Overview
Manufacturer Part Number
IRF6609
Description
MOSFET N-CH 20V 31A DIRECTFET
Detailed Description
N-Channel 20 V 31A (Ta), 150A (Tc) 1.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
4,800
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
31A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2mOhm @ 31A, 10V
Vgs(th) (Max) @ Id
2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6290 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MT
Package / Case
DirectFET™ Isometric MT
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
IRF6609DKR
*IRF6609
SP001523768
IRF6609TR
IRF6609CT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6609
Documents & Media
Datasheets
1(IRF6609)
Other Related Documents
()
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRF6609)
Product Drawings
1(IR Hexfet Circuit)
Quantity Price
-
Substitutes
-