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Part Number Overview
Manufacturer Part Number
BUK652R7-30C,127
Description
MOSFET N-CH 30V 100A TO220AB
Detailed Description
N-Channel 30 V 100A (Tc) 204W (Tc) Through Hole TO-220AB
Manufacturer
NXP USA Inc.
Standard LeadTime
Edacad Model
Standard Package
50
Supplier Stocks
Technical specifications
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
114 nC @ 10 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
6960 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
204W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Base Product Number
BUK65
Environmental & Export Classifications
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
954-BUK652R7-30C127
NEXNXPBUK652R7-30C,127
568-7494-5
934064251127
BUK652R7-30C,127-ND
BUK652R730C127
2156-BUK652R7-30C127-NX
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. BUK652R7-30C,127
Documents & Media
Datasheets
1(BUK652R7-30C)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 31/Dec/2011)
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(BUK652R7-30C)
Quantity Price
-
Substitutes
-