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Part Number Overview
Manufacturer Part Number
FDMS7670
Description
POWER FIELD-EFFECT TRANSISTOR, 2
Detailed Description
N-Channel 30 V 21A (Ta), 42A (Tc) 2.5W (Ta), 62W (Tc) Surface Mount 8-PQFN (5x6)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
520
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
21A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
3.8mOhm @ 21A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
56 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4105 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 62W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PQFN (5x6)
Package / Case
8-PowerTDFN
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
2156-FDMS7670
ONSFDMS7670
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDMS7670
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 520
Unit Price: $0.58
Packaging: Bulk
MinMultiplier: 520
Packaging: Bulk
MinMultiplier: 520
Substitutes
-