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Part Number Overview
Manufacturer Part Number
2SC3070-AE
Description
NPN SILICON TRANSISTOR
Detailed Description
Bipolar (BJT) Transistor NPN 25 V 1.2 A 250MHz 1 W Through Hole 3-MP
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
1,401
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1.2 A
Voltage - Collector Emitter Breakdown (Max)
25 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 10mA, 500mA
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 10mA, 5V
Power - Max
1 W
Frequency - Transition
250MHz
Operating Temperature
-
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
3-MP
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075
Other Names
2156-2SC3070-AE
ONSSNY2SC3070-AE
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SC3070-AE
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 1401
Unit Price: $0.21
Packaging: Bulk
MinMultiplier: 1401
Packaging: Bulk
MinMultiplier: 1401
Substitutes
-