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Part Number Overview
Manufacturer Part Number
IXTK3N250L
Description
MOSFET N-CH 2500V 3A TO264
Detailed Description
N-Channel 2500 V 3A (Tc) 417W (Tc) Through Hole TO-264 (IXTK)
Manufacturer
IXYS
Standard LeadTime
47 Weeks
Edacad Model
Standard Package
25
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
Linear
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
2500 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
230 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
417W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-264 (IXTK)
Package / Case
TO-264-3, TO-264AA
Base Product Number
IXTK3
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTK3N250L
Documents & Media
Datasheets
1(IXTx3N250L)
Environmental Information
1(Ixys IC REACH)
Quantity Price
Quantity: 300
Unit Price: $59.6706
Packaging: Tube
MinMultiplier: 300
Packaging: Tube
MinMultiplier: 300
Substitutes
-