China
Spain
Rusia
Italy
GermanyRJK6014DPP-E0#T2
Part Number Overview
Manufacturer Part Number
RJK6014DPP-E0#T2
Description
POWER FIELD-EFFECT TRANSISTOR
Detailed Description
N-Channel 600 V 16A (Ta) 35W (Tc) Through Hole TO-220FP
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
55
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
16A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
575mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220FP
Package / Case
TO-220-3 Full Pack
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Other Names
2156-RJK6014DPP-E0#T2
RENRNSRJK6014DPP-E0#T2
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation RJK6014DPP-E0#T2
Documents & Media
Datasheets
1(Datasheet)
Quantity Price
Quantity: 55
Unit Price: $5.54
Packaging: Bulk
MinMultiplier: 55
Packaging: Bulk
MinMultiplier: 55
Substitutes
-