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Part Number Overview
Manufacturer Part Number
FPF2C110BI07AS2
Description
IGBT MODULE 650V 40A 300W F2
Detailed Description
IGBT Module Half Bridge 650 V 40 A 300 W Through Hole F2
Manufacturer
onsemi
Standard LeadTime
Edacad Model
Standard Package
Supplier Stocks
Technical specifications
Mfr
onsemi
Series
-
Package
Tray
Product Status
Active
IGBT Type
-
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
40 A
Power - Max
300 W
Vce(on) (Max) @ Vge, Ic
2.3V @ 15V, 40A
Current - Collector Cutoff (Max)
250 µA
Input
Standard
NTC Thermistor
Yes
Operating Temperature
-40°C ~ 150°C
Mounting Type
Through Hole
Package / Case
30-DIP Module
Supplier Device Package
F2
Base Product Number
FPF2C110
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/onsemi FPF2C110BI07AS2
Documents & Media
Datasheets
1(FPF2C110BI07AS2)
Environmental Information
()
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Packaging
1(Mult Devices 24/Oct/2017)
Quantity Price
-
Substitutes
-