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Part Number Overview
Manufacturer Part Number
PMCM6501VPEZ
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
Detailed Description
P-Channel 12 V 6.2A (Ta) 556mW (Ta), 12.5W (Tc) Surface Mount 6-WLCSP (1.48x0.98)
Manufacturer
NXP Semiconductors
Standard LeadTime
Edacad Model
Standard Package
1,528
Supplier Stocks
Technical specifications
Mfr
NXP Semiconductors
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
25mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
29.4 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
1400 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
556mW (Ta), 12.5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-WLCSP (1.48x0.98)
Package / Case
6-XFBGA, WLCSP
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
NEXNEXPMCM6501VPEZ
2156-PMCM6501VPEZ-NEX
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP Semiconductors PMCM6501VPEZ
Documents & Media
Datasheets
1(PMCM6501VPEZ Datasheet)
HTML Datasheet
1(PMCM6501VPEZ Datasheet)
Quantity Price
Quantity: 1528
Unit Price: $0.2
Packaging: Bulk
MinMultiplier: 1528
Packaging: Bulk
MinMultiplier: 1528
Substitutes
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