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Part Number Overview
Manufacturer Part Number
FDP039N08B-F102
Description
MOSFET N-CH 80V 120A TO220-3
Detailed Description
N-Channel 80 V 120A (Tc) 214W (Tc) Through Hole TO-220-3
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
64
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
133 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
9450 pF @ 40 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
ONSONSFDP039N08B-F102
2156-FDP039N08B-F102ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDP039N08B-F102
Documents & Media
Datasheets
1(FDP039N08B-F102 Datasheet)
Quantity Price
Quantity: 64
Unit Price: $4.75
Packaging: Bulk
MinMultiplier: 64
Packaging: Bulk
MinMultiplier: 64
Substitutes
-