China
Spain
Rusia
Italy
GermanyIRLR4343PBF
Part Number Overview
Manufacturer Part Number
IRLR4343PBF
Description
MOSFET N-CH 55V 26A DPAK
Detailed Description
N-Channel 55 V 26A (Tc) 79W (Tc) Surface Mount TO-252AA (DPAK)
Manufacturer
Infineon Technologies
Standard LeadTime
Edacad Model
Standard Package
75
Supplier Stocks
Technical specifications
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
50mOhm @ 4.7A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
42 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
79W (Tc)
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
SP001558486
*IRLR4343PBF
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLR4343PBF
Documents & Media
Datasheets
1(IRL(R,U)4343(-701)PbF)
Other Related Documents
1(Part Number Guide)
Design Resources
1(IRLR4343TRL Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRL(R,U)4343(-701)PbF)
Quantity Price
-
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