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Part Number Overview
Manufacturer Part Number
IXTU4N70X2
Description
MOSFET N-CH 700V 4A TO251
Detailed Description
N-Channel 700 V 4A (Tc) 80W (Tc) Through Hole TO-251-3
Manufacturer
IXYS
Standard LeadTime
47 Weeks
Edacad Model
Standard Package
70
Supplier Stocks
Technical specifications
Mfr
IXYS
Series
Ultra X2
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
700 V
Current - Continuous Drain (Id) @ 25°C
4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
850mOhm @ 2A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
11.8 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
386 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
80W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251-3
Package / Case
TO-251-3 Stub Leads, IPak
Base Product Number
IXTU4
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
-
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTU4N70X2
Documents & Media
Datasheets
()
Environmental Information
1(Ixys IC REACH)
Featured Product
1(Power MOSFETs 600 V to 700 V with HiPerFET™ Option - X2-Class Series)
HTML Datasheet
1(IXT(U,Y,A,P)4N70X2 Datasheet)
Quantity Price
Quantity: 350
Unit Price: $1.98126
Packaging: Tube
MinMultiplier: 350
Packaging: Tube
MinMultiplier: 350
Substitutes
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