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Part Number Overview
Manufacturer Part Number
MRF586G
Description
RF TRANS NPN 17V 3GHZ TO39
Detailed Description
RF Transistor NPN 17V 200mA 3GHz 1W Through Hole TO-39
Manufacturer
Microsemi Corporation
Standard LeadTime
Edacad Model
Standard Package
1
Supplier Stocks
Technical specifications
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
17V
Frequency - Transition
3GHz
Noise Figure (dB Typ @ f)
-
Gain
13.5dB
Power - Max
1W
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 50mA, 5V
Current - Collector (Ic) (Max)
200mA
Operating Temperature
-
Mounting Type
Through Hole
Package / Case
TO-205AD, TO-39-3 Metal Can
Supplier Device Package
TO-39
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
OBSOLETE
HTSUS
0000.00.0000
Other Names
150-MRF586G
MRF586G-ND
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Microsemi Corporation MRF586G
Documents & Media
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 10/Aug/2017)
Quantity Price
-
Substitutes
-