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Part Number Overview
Manufacturer Part Number
SIRS700DP-T1-RE3
Description
N-CHANNEL 100 V (D-S) MOSFET POW
Detailed Description
N-Channel 100 V 30A (Ta), 127A (Tc) 7.4W (Ta),132W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer
Vishay Siliconix
Standard LeadTime
Edacad Model
Standard Package
3,000
Supplier Stocks
Technical specifications
Mfr
Vishay Siliconix
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR)
Product Status
Discontinued at allaboutcomponents.com
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
30A (Ta), 127A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
7.5V, 10V
Rds On (Max) @ Id, Vgs
3.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
130 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5950 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
7.4W (Ta),132W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SO-8
Package / Case
PowerPAK® SO-8
Environmental & Export Classifications
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
742-SIRS700DP-T1-RE3TR
742-SIRS700DP-T1-RE3DKR
742-SIRS700DP-T1-RE3CT
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIRS700DP-T1-RE3
Documents & Media
Datasheets
1(SIRS700DP)
HTML Datasheet
1(SIRS700DP)
Quantity Price
-
Substitutes
Part No. : SIRS700DP-T1-GE3
Manufacturer. : Vishay Siliconix
Quantity Available. : 4,259
Unit Price. : $3.30000
Substitute Type. : Parametric Equivalent
Quantity Available. : 4,259
Unit Price. : $3.30000
Substitute Type. : Parametric Equivalent