China
Spain
Rusia
Italy
GermanyFDI045N10A
Part Number Overview
Manufacturer Part Number
FDI045N10A
Description
MOSFET N-CH 100V 120A I2PAK-3
Detailed Description
N-Channel 100 V 120A (Tc) 263W (Tc) Through Hole I2PAK (TO-262)
Manufacturer
Fairchild Semiconductor
Standard LeadTime
Edacad Model
Standard Package
139
Supplier Stocks
Technical specifications
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
74 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
5270 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
263W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I2PAK (TO-262)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
FDI045
Environmental & Export Classifications
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8542.39.0001
Other Names
2156-FDI045N10A
FAIFSCFDI045N10A
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDI045N10A
Documents & Media
Datasheets
1(FDP045N10AF102 Datasheet)
Quantity Price
Quantity: 139
Unit Price: $2.17
Packaging: Bulk
MinMultiplier: 139
Packaging: Bulk
MinMultiplier: 139
Substitutes
-