China
Spain
Rusia
Italy
Germany2SC1214D
Part Number Overview
Manufacturer Part Number
2SC1214D
Description
SMALL SIGNAL BIPOLAR TRANSISTOR,
Detailed Description
Bipolar (BJT) Transistor NPN 50 V 500 mA 600 mW Through Hole TO-92
Manufacturer
Renesas Electronics Corporation
Standard LeadTime
Edacad Model
Standard Package
2,029
Supplier Stocks
Technical specifications
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
500 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
600mV @ 15mA, 150mA
Current - Collector Cutoff (Max)
500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 10mA, 3V
Power - Max
600 mW
Frequency - Transition
-
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
Environmental & Export Classifications
ECCN
EAR99
HTSUS
8541.21.0095
Other Names
RENRNS2SC1214D
2156-2SC1214D
Category
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Renesas Electronics Corporation 2SC1214D
Documents & Media
Datasheets
1(2SC1214D Datasheet)
Quantity Price
Quantity: 2029
Unit Price: $0.15
Packaging: Bulk
MinMultiplier: 2029
Packaging: Bulk
MinMultiplier: 2029
Substitutes
-