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Part Number Overview
Manufacturer Part Number
TK20N60W5,S1VF
Description
MOSFET N-CH 600V 20A TO247
Detailed Description
N-Channel 600 V 20A (Ta) 165W (Tc) Through Hole TO-247
Manufacturer
Toshiba Semiconductor and Storage
Standard LeadTime
52 Weeks
Edacad Model
TK20N60W5,S1VF Models
Standard Package
30
Supplier Stocks
Technical specifications
Mfr
Toshiba Semiconductor and Storage
Series
DTMOSIV
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
175mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
165W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Base Product Number
TK20N60
Environmental & Export Classifications
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Other Names
TK20N60W5S1VF
TK20N60W5,S1VF(S
Category
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK20N60W5,S1VF
Documents & Media
Datasheets
1(TK20N60W5)
Featured Product
1(Server Solutions)
EDA Models
1(TK20N60W5,S1VF Models)
Quantity Price
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MinMultiplier: 1
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MinMultiplier: 1
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